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• W3020928082 abstract "In this work, we investigated an anomalous hump in the bottom-gate amorphous-InGaZnO thin-film transistors. The hump in the subthreshold region appeared at elevated temperature and disappeared after N2 atmosphere annealing. The anomalous hump phenomenon is attributed to the existence of both main current path composed by electron and parasitic current path induced by positive charges formed by adsorbed H2O molecules. With the increase of the testing temperature, the hump effect becomes significant since the formation of positive charges is strengthened by heat. This hump can be weakened by negative bias temperature instability stress at high temperature due to the charge-trapping mechanism." @default.
• W3020928082 created "2020-05-13" @default.
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• W3020928082 date "2020-08-01" @default.
• W3020928082 modified "2023-10-17" @default.
• W3020928082 title "Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors" @default.
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• W3020928082 doi "https://doi.org/10.1016/j.sse.2020.107814" @default.
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