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• W3021131236 abstract "The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoO x cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < 5 % of b-Si over the entire visible and near-IR ( λ < 2 μ m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO2." @default.
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• W3021131236 date "2020-05-01" @default.
• W3021131236 modified "2023-10-18" @default.
• W3021131236 title "Black-Si as a Photoelectrode" @default.
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• W3021131236 doi "https://doi.org/10.3390/nano10050873" @default.
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