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- W3021742783 abstract "A new class of metal–insulator tunneling transistor (MITT) devices is proposed and investigated. The planar dual-gate structure allows for complete gate field penetration of the transistor channel to modulate tunneling current across the channel. For a 5-nm channel length, with contact geometries that reflect the reality of fabricating at such a scale, we show that a 10% decrease in the effective electron tunneling length results in a $5.5times $ increase in current up to $4.4{times }10^{-6} mA/mu {}m$ . The device demonstrates an ON-/ OFF-current ratio that is $2.5times $ greater than that of a complementary metal–oxide–semiconductor (CMOS)-style MITT with a 5-nm channel length. Without the use of a second gate insulator, the source-to-drain current density is more than 104 times greater than the source-to-gate leakage current density, indicating the efficacy of the presented realistic MITT implementation." @default.
- W3021742783 created "2020-05-13" @default.
- W3021742783 creator A5058871391 @default.
- W3021742783 creator A5063393552 @default.
- W3021742783 date "2020-06-01" @default.
- W3021742783 modified "2023-09-26" @default.
- W3021742783 title "Deep Gate Field Penetration Au:ZrO2 Metal–Insulator Tunneling Transistor" @default.
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- W3021742783 doi "https://doi.org/10.1109/ted.2020.2988857" @default.
- W3021742783 hasPublicationYear "2020" @default.
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