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- W3022004975 abstract "We developed a novel vertically integrated, double stack oxide thin-film transistor (TFT) backplane for high-resolution organic light-emitting diode (OLED) displays. The first TFT layer is bulk-accumulation mode, and the second TFT layer is a single gate with back-channel etched structure. The extracted mobilities and threshold voltages are higher than 10 cm2/Vs and 0 ~ 1 V, respectively. Both TFTs are found to be extremely stable under the bias and temperature stress. The gate driver with width of 530 μm and a pitch of 18.6 μm was developed, exhibiting well shifted signal up to the last stage of 900 stages without output degradation, which could be used for 1360 ppi TFT backplane." @default.
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- W3022004975 date "2020-05-04" @default.
- W3022004975 modified "2023-10-16" @default.
- W3022004975 title "Vertically integrated, double stack oxide TFT layers for high‐resolution AMOLED backplane" @default.
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- W3022004975 doi "https://doi.org/10.1002/jsid.907" @default.
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