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• W3022120975 abstract "Publisher SummaryThis chapter discusses electrical properties of thin films that are vital to the efficient functioning of many devices, such as interconnections in integrated circuits, thin-film transistors, and for dielectric films, which require a high breakdown voltage. Deposited films have higher values of resistivity as compared to their corresponding bulk metallic form. When films become thinner than the electron mean free path, it becomes possible to have a surface scattering contribution to the resistivity. Structure affects the magnitude of this contribution and is manifested as an effect of the roughness at the interfaces of the film. The chapter describes the electrical properties of thin films and the way the structure (mostly defect structure) affects them. It discusses the solar efficiency and diffusion length of silicon cells and compound cells. Leakage currents in devices occur either in the active regions of devices in the semiconductor lattice itself or through the thin insulators separating regions of different electric potential. One of the sources of leakage current in the active regions of devices is the presence of extended defects in such regions. The chapter describes the properties of extended defects that lead to enhanced conductivity because of their presence in the active regions of semiconductor devices and the way various point defects act to enhance the leakage current in insulators. High dielectric constant materials also have application as thin film capacitors for dynamic random-access memories (DRAM), non-volatile ferroelectric random-access memories (NVFRAM), and piezoelectric films for MEMS, for tunable microwave components, phase shifters, and resonators." @default.
• W3022120975 created "2020-05-13" @default.
• W3022120975 creator A5027755214 @default.
• W3022120975 date "2006-01-01" @default.
• W3022120975 modified "2023-09-23" @default.
• W3022120975 title "Electrical Properties" @default.
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