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• W3022178835 abstract "We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 deg and 4 deg miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 deg towards <-1100>. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (002) and (102) reflections, respectively. The root mean square roughness was 0.43 nm for a 2 um x 2 um atomic force microscope scan." @default.
• W3022178835 created "2020-05-13" @default.
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• W3022178835 date "2018-04-01" @default.
• W3022178835 modified "2023-09-24" @default.
• W3022178835 title "MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality" @default.
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• W3022178835 doi "https://doi.org/10.1016/j.jcrysgro.2018.02.013" @default.
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