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- W3022208142 abstract "This chapter discusses the case of “compensated conductivity” that refers to n-type or p-type doped CdTe. Impurity compensation refers to the fact that the doping efficiency of a majority impurity is reduced by the presence of oppositely charged defect centres. This is a general situation in semiconductors because several types of impurities and defects usually coexist. Weak or moderate compensation applies to well-defined n-type or p-type semiconductors. It restricts the doping efficiency of the doping impurity, within the solubility limit of the latter. The concentration and nature of the compensating defects could be closely linked to the doping impurity: this is the so-called self-compensation phenomenon, of frequent occurrence in II–VI compounds. Strong compensation can lead to a semi-insulating state. De Nobel first observed that donor-doped CdTe could exhibit a sudden conductivity drop at low PCd pressure. This trend logically points to the involvement of cadmium vacancies that were the basis of the early defect structure models. On the other hand it is unrealistic to consider that only shallow donors and acceptors in strictly balanced concentrations are implied. Consequently the second ionization level of VCd that was assumed in these works to be deep was invoked in favor of the Fermi level stabilisation at a midgap position" @default.
- W3022208142 created "2020-05-13" @default.
- W3022208142 creator A5021032539 @default.
- W3022208142 date "2010-01-01" @default.
- W3022208142 modified "2023-09-25" @default.
- W3022208142 title "Impurity Compensation" @default.
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- W3022208142 doi "https://doi.org/10.1016/b978-0-08-046409-1.00007-1" @default.
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