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• W3022245730 startingPage "7120" @default.
• W3022245730 abstract "Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using Hf_xZr_1−xO₂ thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition." @default.
• W3022245730 created "2020-05-13" @default.
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• W3022245730 date "2020-01-01" @default.
• W3022245730 modified "2023-09-27" @default.
• W3022245730 title "Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf_0.5Zr_0.5O₂ thin films controlled by oxygen partial pressures during the sputtering deposition process" @default.
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• W3022245730 doi "https://doi.org/10.1039/d0tc01105c" @default.
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