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• W3022514510 abstract "A silicon-based laser remains an important goal in science and technology. Unfortunately silicon is ill-suited as a light-emitter, prompting the need for alternative high quality light sources integrated with silicon. One such alternative, presented here, is a monolithic III-N edge-emitting laser comprised of a planarized nanowire array. Nanowire heterostructures with InGaN/GaN disk-in-nanowire active regions were grown on (001)silicon and planarized with parylene, forming a composite slab heterostructure supporting a guided mode propagating transverse to the growth direction. From this composite slab, ridge-geometry lasers were fabricated. Lasers with emission at 533 nm (green) and 610 nm (red) are presented here. The lasers are characterized by J_th = 1.76 kA/cm² (green) and 2.94kA/cm² (red) under continuous wave current injection. The green lasers have device lifetime of ~7000 hrs. Small-signal modulation measurements have also been performed. The -3dB modulation bandwidth of the green laser is 5.7 GHz." @default.
• W3022514510 created "2020-05-13" @default.
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• W3022514510 date "2015-03-10" @default.
• W3022514510 modified "2023-09-26" @default.
• W3022514510 title "A monolithic electrically-injected nanowire array edge-emitting laser on (001) silicon" @default.
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• W3022514510 doi "https://doi.org/10.1117/12.2078262" @default.
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