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• W3022539605 endingPage "198" @default.
• W3022539605 startingPage "192" @default.
• W3022539605 abstract "We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate. Impact on the device characteristics with the inclusion of a HfO2 surface passivation layer and an AlN buffer layer in the MOS-HEMT structure as a performance booster has been analyzed for the HEMT device with 30 nm gate length using Silvaco ATLAS TCAD. The proposed MOS-HEMT exhibits an outstanding performance, with an enhanced power gain cut-off frequency (fmax) of 366 GHz, a current gain cut-off frequency (ft) of 426 GHz, and a off-state breakdown voltage (Vbr) of 81 V. The high-k (high permittivity) HfO2 based metal oxide semiconductor HEMT device experiences a low off-state gate leakage current (Ig ~ 10−11A/mm) and a high Ion/Ioff ratio of 109. The InAlN/GaN/AlN heterostructures demonstrate improved two-dimensional electron gas (2DEG ~ 5.3 × 1013 cm−2), carrier mobility (μ) of 1256 Cm2/V-s and drain current density of (Ids) 2.7 A/mm. A large signal analysis performed at 30 GHz yielded a maximum of 28% power-added efficiency. The high JFoM of 34.506 THz V (Johnson Figure of Merit = ft × Vbr) and (ft.fmax)1/2 of 394.86 GHz indicate the potential applicability of the HfO2/InAlN/GaN MOS-HEMTs in high-frequency and high-power applications." @default.
• W3022539605 created "2020-05-13" @default.
• W3022539605 creator A5005646526 @default.
• W3022539605 creator A5008110759 @default.
• W3022539605 creator A5045753894 @default.
• W3022539605 creator A5047450174 @default.
• W3022539605 creator A5048297439 @default.
• W3022539605 creator A5049914663 @default.
• W3022539605 creator A5050527291 @default.
• W3022539605 creator A5055561677 @default.
• W3022539605 creator A5070796690 @default.
• W3022539605 date "2020-06-01" @default.
• W3022539605 modified "2023-09-30" @default.
• W3022539605 title "Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications" @default.
• W3022539605 cites W1972759471 @default.
• W3022539605 cites W2007877141 @default.
• W3022539605 cites W2040487479 @default.
• W3022539605 cites W2063781729 @default.
• W3022539605 cites W2070922388 @default.
• W3022539605 cites W2077997676 @default.
• W3022539605 cites W2079731112 @default.
• W3022539605 cites W2080431801 @default.
• W3022539605 cites W2098310835 @default.
• W3022539605 cites W2111289411 @default.
• W3022539605 cites W2116235745 @default.
• W3022539605 cites W2123444016 @default.
• W3022539605 cites W2124216586 @default.
• W3022539605 cites W2135780270 @default.
• W3022539605 cites W2137003270 @default.
• W3022539605 cites W2137778525 @default.
• W3022539605 cites W2141891416 @default.
• W3022539605 cites W2149996231 @default.
• W3022539605 cites W2161008950 @default.
• W3022539605 cites W2164834175 @default.
• W3022539605 cites W2165910640 @default.
• W3022539605 cites W2205369240 @default.
• W3022539605 cites W2209937733 @default.
• W3022539605 cites W2335313951 @default.
• W3022539605 cites W2611856904 @default.
• W3022539605 cites W2732936742 @default.
• W3022539605 cites W2773375455 @default.
• W3022539605 cites W2906762740 @default.
• W3022539605 doi "https://doi.org/10.1016/j.jsamd.2020.04.007" @default.
• W3022539605 hasPublicationYear "2020" @default.
• W3022539605 type Work @default.
• W3022539605 sameAs 3022539605 @default.
• W3022539605 citedByCount "13" @default.
• W3022539605 countsByYear W30225396052020 @default.
• W3022539605 countsByYear W30225396052021 @default.
• W3022539605 countsByYear W30225396052022 @default.
• W3022539605 countsByYear W30225396052023 @default.
• W3022539605 crossrefType "journal-article" @default.
• W3022539605 hasAuthorship W3022539605A5005646526 @default.
• W3022539605 hasAuthorship W3022539605A5008110759 @default.
• W3022539605 hasAuthorship W3022539605A5045753894 @default.
• W3022539605 hasAuthorship W3022539605A5047450174 @default.
• W3022539605 hasAuthorship W3022539605A5048297439 @default.
• W3022539605 hasAuthorship W3022539605A5049914663 @default.
• W3022539605 hasAuthorship W3022539605A5050527291 @default.
• W3022539605 hasAuthorship W3022539605A5055561677 @default.
• W3022539605 hasAuthorship W3022539605A5070796690 @default.
• W3022539605 hasBestOaLocation W30225396051 @default.
• W3022539605 hasConcept C119599485 @default.
• W3022539605 hasConcept C127413603 @default.
• W3022539605 hasConcept C130277099 @default.
• W3022539605 hasConcept C162057924 @default.
• W3022539605 hasConcept C165801399 @default.
• W3022539605 hasConcept C171250308 @default.
• W3022539605 hasConcept C172385210 @default.
• W3022539605 hasConcept C192562407 @default.
• W3022539605 hasConcept C2779227376 @default.
• W3022539605 hasConcept C33574316 @default.
• W3022539605 hasConcept C49040817 @default.
• W3022539605 hasConceptScore W3022539605C119599485 @default.
• W3022539605 hasConceptScore W3022539605C127413603 @default.
• W3022539605 hasConceptScore W3022539605C130277099 @default.
• W3022539605 hasConceptScore W3022539605C162057924 @default.
• W3022539605 hasConceptScore W3022539605C165801399 @default.
• W3022539605 hasConceptScore W3022539605C171250308 @default.
• W3022539605 hasConceptScore W3022539605C172385210 @default.
• W3022539605 hasConceptScore W3022539605C192562407 @default.
• W3022539605 hasConceptScore W3022539605C2779227376 @default.
• W3022539605 hasConceptScore W3022539605C33574316 @default.
• W3022539605 hasConceptScore W3022539605C49040817 @default.
• W3022539605 hasIssue "2" @default.
• W3022539605 hasLocation W30225396051 @default.
• W3022539605 hasOpenAccess W3022539605 @default.
• W3022539605 hasPrimaryLocation W30225396051 @default.
• W3022539605 hasRelatedWork W1545167317 @default.
• W3022539605 hasRelatedWork W1590111058 @default.
• W3022539605 hasRelatedWork W1643924019 @default.
• W3022539605 hasRelatedWork W1911586375 @default.
• W3022539605 hasRelatedWork W2028662844 @default.
• W3022539605 hasRelatedWork W2094144940 @default.
• W3022539605 hasRelatedWork W2542617339 @default.
• W3022539605 hasRelatedWork W2545909941 @default.
• W3022539605 hasRelatedWork W4283034319 @default.
• W3022539605 hasRelatedWork W4299546490 @default.

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