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• W3022608839 abstract "Abstract In this work, three indium tin oxide (ITO) films with distinct resistance values were realized by optimizing the deposition process, and X-ray photoelectron spectroscopy was performed to confirm the origin of resistance variation in the different ITO films. Three ITO/HfOx/TiN (IHT) devices were correspondingly constructed by capping the distinct ITO films applied as a top electrode. A series of reliability measures indicated that the IHT stack capping ITO films with high resistance value (RTE, ~600 Ω) demonstrated better performance. For example, endurance of up to 105 sweep cycles, compared with other stacks capping ITO films with low RTE (~300 Ω or 50 Ω). Furthermore, the Schottky emission mechanism was confirmed through fitting of I-V-curves in the HRS, and the carrier conduction was determined primarily by an Ohmic mechanism in the LRS." @default.
• W3022608839 created "2020-05-13" @default.
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• W3022608839 date "2020-09-01" @default.
• W3022608839 modified "2023-10-15" @default.
• W3022608839 title "Enhanced reliability through regulation of electrode resistance in indium tin oxide/HfO /TiN resistive memories" @default.
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• W3022608839 doi "https://doi.org/10.1016/j.mssp.2020.105103" @default.
• W3022608839 hasPublicationYear "2020" @default.
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