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• W3022667259 endingPage "374" @default.
• W3022667259 startingPage "349" @default.
• W3022667259 abstract "Publisher SummaryThis chapter discusses the deep reactive ion etching in detail. Reactive Ion Etching (RIE), also known as plasma etching or dry etching, and its extension deep reactive ion etching (DRIE) are processes that combine physical and chemicals effect to remove material from the wafer surface. Etchant phase, gas or liquid, has been used as a dividing factor: wet etching in liquids vs. dry etching in gaseous environment, usually in vacuum. Silicon and its compounds can be etched in fluorine, chlorine or bromine plasmas. Oxygen is an active ingredient in many etching processes. Ion beam etching relies on energetic argon ions and differs thus from RIE. The division between RIE and DRIE can be made according to etch rate, selectivity, aspect ratio capability or reactor type. The main etching mechanism of the masking material is typically physical sputtering. Therefore, the masking material is etched relatively fast in this kind of RIE equipment. The parameters available for DRIE process optimization include etchant gases, flow rate of the chosen gases, RF-power, bias voltage, process pressure and temperature. Both Bosch and cryo-processes use purely fluorine-based plasma chemistry, since fluorine-based etching processes for silicon offer superior etch rates and high mask selectivities. The fastest and the simplest way to create patterns is to use photoresist as an etch mask. Silica and glass also overcome many limitations of polymers because of their low auto-fluorescence, mechanical wear resistance, reusability, and smooth surfaces. Clamping can be realized with two different methods, mechanically or electrostatically. Micromasking in glass etching is similar to silicon etching: small particles of mask material sputter off and land on areas to be etched. Polymers can be etched by oxygen plasmas using silicon, metal and oxide masks. The notching effect is seen when high-density plasma etching reaches an insulator surface." @default.
• W3022667259 created "2020-05-13" @default.
• W3022667259 creator A5006834180 @default.
• W3022667259 creator A5037545849 @default.
• W3022667259 creator A5070935267 @default.
• W3022667259 creator A5076849496 @default.
• W3022667259 date "2010-01-01" @default.
• W3022667259 modified "2023-09-27" @default.
• W3022667259 title "Deep Reactive Ion Etching" @default.
• W3022667259 cites W1506673119 @default.
• W3022667259 cites W1671492068 @default.
• W3022667259 cites W1680662765 @default.
• W3022667259 cites W1966548041 @default.
• W3022667259 cites W1968590512 @default.
• W3022667259 cites W1970819096 @default.
• W3022667259 cites W1971870738 @default.
• W3022667259 cites W1972193798 @default.
• W3022667259 cites W1973190610 @default.
• W3022667259 cites W1976268392 @default.
• W3022667259 cites W1978999024 @default.
• W3022667259 cites W1979426142 @default.
• W3022667259 cites W1981551550 @default.
• W3022667259 cites W1983016355 @default.
• W3022667259 cites W1984405417 @default.
• W3022667259 cites W1986396935 @default.
• W3022667259 cites W1987750480 @default.
• W3022667259 cites W1990567599 @default.
• W3022667259 cites W1993264655 @default.
• W3022667259 cites W1996387636 @default.
• W3022667259 cites W1998773400 @default.
• W3022667259 cites W2007925508 @default.
• W3022667259 cites W2011740898 @default.
• W3022667259 cites W2017612055 @default.
• W3022667259 cites W2017794855 @default.
• W3022667259 cites W2018797807 @default.
• W3022667259 cites W2023288568 @default.
• W3022667259 cites W2025698258 @default.
• W3022667259 cites W2028685026 @default.
• W3022667259 cites W2031073225 @default.
• W3022667259 cites W2031943348 @default.
• W3022667259 cites W2032988899 @default.
• W3022667259 cites W2035283403 @default.
• W3022667259 cites W2036812893 @default.
• W3022667259 cites W2037752703 @default.
• W3022667259 cites W2039934353 @default.
• W3022667259 cites W2040212024 @default.
• W3022667259 cites W2042755949 @default.
• W3022667259 cites W2045739729 @default.
• W3022667259 cites W2046362529 @default.
• W3022667259 cites W2049516645 @default.
• W3022667259 cites W2051188571 @default.
• W3022667259 cites W2052672479 @default.
• W3022667259 cites W2053356762 @default.
• W3022667259 cites W2057079666 @default.
• W3022667259 cites W2057815374 @default.
• W3022667259 cites W2059432158 @default.
• W3022667259 cites W2059967747 @default.
• W3022667259 cites W2061082483 @default.
• W3022667259 cites W2064516642 @default.
• W3022667259 cites W2067487016 @default.
• W3022667259 cites W2071484764 @default.
• W3022667259 cites W2072583445 @default.
• W3022667259 cites W2073089007 @default.
• W3022667259 cites W2074163055 @default.
• W3022667259 cites W2074825919 @default.
• W3022667259 cites W2076581976 @default.
• W3022667259 cites W2077584139 @default.
• W3022667259 cites W2079531977 @default.
• W3022667259 cites W2080010523 @default.
• W3022667259 cites W2080468581 @default.
• W3022667259 cites W2081095592 @default.
• W3022667259 cites W2081291519 @default.
• W3022667259 cites W2081433346 @default.
• W3022667259 cites W2081928831 @default.
• W3022667259 cites W2082508497 @default.
• W3022667259 cites W2084141645 @default.
• W3022667259 cites W2091861344 @default.
• W3022667259 cites W2094396522 @default.
• W3022667259 cites W2094652511 @default.
• W3022667259 cites W2094818654 @default.
• W3022667259 cites W2096120665 @default.
• W3022667259 cites W2100502452 @default.
• W3022667259 cites W2103132072 @default.
• W3022667259 cites W2104269186 @default.
• W3022667259 cites W2109233209 @default.
• W3022667259 cites W2110070104 @default.
• W3022667259 cites W2111848704 @default.
• W3022667259 cites W2112964230 @default.
• W3022667259 cites W2121351108 @default.
• W3022667259 cites W2130045603 @default.
• W3022667259 cites W2130223942 @default.
• W3022667259 cites W2131365212 @default.
• W3022667259 cites W2132056658 @default.
• W3022667259 cites W2132756315 @default.
• W3022667259 cites W2134148390 @default.
• W3022667259 cites W2134569571 @default.
• W3022667259 cites W2135095428 @default.
• W3022667259 cites W2143898235 @default.

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