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- W3022764618 abstract "Semiconducting layered materials such as transition metal dichalcogenides (TMDCs) have emerged as a significant class of electronic materials. The most representative material MoS2 in this class has been utilized to enhance the performance parameters of electronic devices in the numerous applications including in the field of photovoltaics, sensing, TFTs, etc. Here we study the MoS2 nanopillars grown on different substrates by using pulsed DC magnetron sputtering technique. Using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) analysis. We have been able to observe the role of growth conditions on morphology and geometrical size of the nanopillars. The control on sputtering conditions resulted in self grown nanopillar array on quartz substrates. Considering the correlation between the influences of substrate roughness and sputtering power on the growth of MoS2 nanopillars, we have found out a straight forward and lithography free technique to grow nanopillars of MoS2. Growth of MoS2 nanopillars through sputtering technique opens up a pathway to solve the challenge of scalability at room temperature for MoS2 nanostructure based devices." @default.
- W3022764618 created "2020-05-13" @default.
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- W3022764618 date "2020-01-01" @default.
- W3022764618 modified "2023-10-16" @default.
- W3022764618 title "Facile growth of MoS2 nanopillars using pulsed DC magnetron sputtering technique" @default.
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- W3022764618 doi "https://doi.org/10.1063/5.0002132" @default.
- W3022764618 hasPublicationYear "2020" @default.
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