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- W3022980458 abstract "Epiwafer is a wafer of semiconducting material made by epitaxial growth used in making microelectronic devices, which is an essential step in the formation of many MEMS structures. This chapter briefs on the fundamentals of epitaxial disposition with some specific examples. Epitaxy was invented to improve doping profile abruptness and increase in the operating frequencies of bipolar transistors. The selection of Silicon precursors and deposition temperature are related to the dopants and structure present on the wafer prior to epitaxy. This has been discussed in this chapter effectively with appropriate examples. Hard, honest cost and technical performance evaluations are essential to choosing the correct epi system architecture. Along with single wafer epi system, which dominates the S1 semiconductor industry, batch epi systems also play an equally important role. This chapter tries to throw some light on Si epitaxy processing for MEMS applications. It also explains the important commercially available epitaxy systems. The best choice of epi process tools require consideration of technical requirements as well as productivity and economic performance. A review of metrology as it applies to epitaxial layers for measurements of thickness, resistivity and defect densities is provided in this section. The epi poly process, which is used to deposit both monocrystalline and polycrystalline on the wafer is illustrated with examples. Some data on the epi layer structures that are used as etch stops in MEMS applications is also provided." @default.
- W3022980458 created "2020-05-13" @default.
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- W3022980458 date "2010-01-01" @default.
- W3022980458 modified "2023-09-27" @default.
- W3022980458 title "Epi Wafers" @default.
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- W3022980458 doi "https://doi.org/10.1016/b978-0-8155-1594-4.00006-1" @default.
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