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- W3022985441 abstract "We report the photochemical atomic layer deposition of Al2O3 thin films and the use of this process to achieve area-selective film deposition. A shuttered vacuum ultraviolet (VUV) light source is used to excite molecular oxygen and trimethyl aluminum to deposit films at 60 degrees C. In-situ QCM and post-deposition ellipsometric measurements both show that the deposition rate is saturative as a function of irradiation time. Selective area deposition was achieved by projecting the VUV light through a metalized magnesium fluoride photolithographic mask and the selectivity of deposition on the illuminated and masked regions of the substrate is a logarithmic function of the UV exposure time. The Al2O3 films exhibit dielectric constants of 8 - 10 at 1 MHz after forming gas annealing, similar to films deposited by conventional thermal ALD. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License." @default.
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- W3022985441 date "2015-01-09" @default.
- W3022985441 modified "2023-09-24" @default.
- W3022985441 title "Vacuum ultraviolet photochemical selectivearea atomic layer deposition of Al2O3 dielectrics" @default.
- W3022985441 hasPublicationYear "2015" @default.
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