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- W3023136502 abstract "An innovative TFET called Double Symmetrical Source Tunnel FET (DSS-TFET) is put forward in this paper, which fosters higher I ON with smaller driving voltage as compared to conventional TFETs. The tunnelling area is considerably upgraded which increases the I ON , for smaller turn-on voltage. The influence of various parameters like channel length, oxide thickness, gate work-function and Source-length on the efficiency of the device have been studied and compared with conventional TFET devices. Silvaco-Atlas 2-D simulation has been present exhibits excellent SS of 23mV/decade and high ION/IOFF of 1013 at V DS =0.1V. 1-D Quantum confinement effect has been studied for the proposed DSS-TFET using the Schrӧdinger-Poisson model in the simulations. The DSS-TFET has excellent performance characteristics and is viable for low power applications." @default.
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- W3023136502 date "2020-03-01" @default.
- W3023136502 modified "2023-10-16" @default.
- W3023136502 title "The Hypothesis of Two-Sources on TFET’s Ambipolar Current and its Quantum Confinement Effect" @default.
- W3023136502 cites W2110584581 @default.
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- W3023136502 doi "https://doi.org/10.1109/ieecon48109.2020.229576" @default.
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