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- W3023192934 endingPage "25399" @default.
- W3023192934 startingPage "25390" @default.
- W3023192934 abstract "In the present study, a comparative study on the influence of different laminated stacks driven by aomic layer deposition (ALD) on the interfacial and electrcial properties of high-k/Ge gate stacks passivated by trimethylaluminum (TMA) has been performed in detail via X-ray photoelectron spectroscopy (XPS) and electrical measurements. XPS measurements indicate that HfO2/Al2O3/Ge gate stacks can effectively inhibit the formation of Ge suboxides and a low-k germanate layer. Compared to Al2O3/HfO2 and HfO2/Al2O3/HfO2 gate stacks, the HfO2/Al2O3/Ge metal oxide semiconductor (MOS) capacitors exhibited improved electrical performance, including a maximum permittivity of 18.15, disappearing hysteresis, an almost neglected flat band voltage of 0.01 V, and a minimum leakage current density of 3.82 × 10–8 A/cm2 at room temperature. Especially, the leakage current mechanisms of Ge-MOS capacitors based on different laminated stacks measured at room temperature and low temperature (77–327 K) have been comprehensively analyzed. By comparing three different laminated gate stacks, it can be inferred that HfO2/Al2O3/Ge gate stacks have a potential application prospect in Ge-based microelectronic devices." @default.
- W3023192934 created "2020-05-13" @default.
- W3023192934 creator A5003815331 @default.
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- W3023192934 date "2020-05-08" @default.
- W3023192934 modified "2023-10-06" @default.
- W3023192934 title "Interface Chemistry and Dielectric Optimization of TMA-Passivated high-<i>k</i>/Ge Gate Stacks by ALD-Driven Laminated Interlayers" @default.
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- W3023192934 doi "https://doi.org/10.1021/acsami.0c02963" @default.
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