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- W3023214042 abstract "The formation and annealing behavior of an amorphous layer produced by tin implantation into sapphire has been studied. Tin ions with 180 keV energy were implanted into {alpha}-Al{sub 2}O{sub 3} at 300 K with fluences ranging from 10{sup 15} to 10{sup 17} ions-cm{sup {minus}2}. The thermal stability of the damaged layer was investigated with post-implantation annealing treatments at temperatures up to 1375 K in either oxidizing or reducing atmospheres. The atomic spatial distribution of the ions were determined by Rutherford backscattering spectroscopy (RBS) in random and channeling geometries. The structure of the implanted layer was determined by analytical electron microscopy (AEM). The degree of disorder was found to increase linearly with the fluence up to the threshold for amorphization, {approximately}1 {times} 10{sup 16} ions-cm{sup {minus}2}. The microstructure of the implanted layer after the thermal treatments depended on the annealing atmosphere. The well-known amorphous {yields} {gamma}-Al{sub 2}O{sub 3}{yields} {alpha}-Al{sub 2}O{sub 3} phase transition was observed during annealing in a reducing atmosphere. However, anneals in an oxidizing environment led to the formation of the compound SnO{sub 2}, which was found to stabilize the cubic {gamma}-Al{sub 2}O{sub 3} phase. 17 refs., 6 figs." @default.
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- W3023214042 date "1991-01-01" @default.
- W3023214042 modified "2023-09-26" @default.
- W3023214042 title "Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire" @default.
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