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• W3023641039 abstract "We study the ultrafast time resolved response of 30 nm films of VO 2 on a TiO 2 substrate when 3.1 eV (400 nm wavelength) pump pulses were used to excite the insulator to metal transition (IMT). We found that the IMT threshold for these samples (≤30µJ/cm 2 ) is more than 3 orders of magnitude lower than that generally reported for a more traditional 1.55 eV (800 nm wavelength) excitation. The samples also exhibited unusual reflectivity dynamics at near-threshold values of pump fluence where their fractional relative reflectivity ΔR/R initially increased before becoming negative after several hundreds of picoseconds, in stark contrast with uniformly negative ΔR/R observed for both higher 400 nm pump fluences and for 800 nm pump pulses. We explain the observed behavior by the interference of the reflected probe beam from the inhomogeneous layers formed inside the film by different phases of VO 2 and use a simple diffusion model of the VO 2 phase transition to support qualitatively this hypothesis. We also compare the characteristics of the VO 2 films grown on undoped TiO 2 and on doped TiO 2 :Nb substrates and observe more pronounced reflectivity variation during IMT and faster relaxation to the insulating state for the VO 2 /TiO 2 :Nb sample." @default.
• W3023641039 created "2020-05-13" @default.
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• W3023641039 date "2020-05-18" @default.
• W3023641039 modified "2023-09-24" @default.
• W3023641039 title "Dynamics of the blue pump-induced ultrafast insulator-to-metal transition and relaxation in VO₂/TiO₂ and VO₂/TiO₂:Nb thin films" @default.
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• W3023641039 doi "https://doi.org/10.1364/ome.394653" @default.
• W3023641039 hasPublicationYear "2020" @default.
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