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• W3023744974 abstract "The study of surface reactivity, such as the nucleation and growth of crystals, requires both chemically clean and atomically perfect surfaces. This work describes the use of an ultra-high vacuum SEM, equipped with AES and RHEED to study the cleaning procedures of various types of Si(100) wafers, both prior to, and after Ag deposition. It was found that most frequently applied cleaning methods lead to structural imperfections in the form of etch pits. Repeated deposition and desorption of Ag greatly enhances the rate of formation of such pits. The pits themselves are not always detectable by AES or LEED/RHEED, but can be seen from the early stages by SEM. These undesirable effects can be greatly reduced by the use of autoepitaxial Si(100) wafers. The cleaning procedure for these wafers is described and discussed." @default.
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• W3023744974 date "1984-02-01" @default.
• W3023744974 modified "2023-09-24" @default.
• W3023744974 title "Surface cleaning of Si(100) and Ag/Si(100): Characterisation by SEM, AES and RHEED" @default.
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• W3023744974 doi "https://doi.org/10.1016/0167-2584(84)90871-5" @default.
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