Matches in SemOpenAlex for { <https://semopenalex.org/work/W3025101308> ?p ?o ?g. }
Showing items 1 to 81 of
81
with 100 items per page.
- W3025101308 endingPage "106574" @default.
- W3025101308 startingPage "106574" @default.
- W3025101308 abstract "Abstract Numerical assessment of Dual-Gate AlGaN/GaN MISHEMT have been presented in this paper. Analytical model has been developed and the various parameters extracted are surface potential, electric field and threshold voltage for different device specifications. Threshold voltage of nearly 0.15 V has been computed which is nearly same to that of simulated Dual-Gate MISHEMT. Simulations have been performed using ATLAS TCAD tool. Dual-Gate MISHEMT with different gate dielectric materials such as Si3N4 and gate stack combinations like HfO2/Al2O3 has been analyzed. From the results it has been inferred that at higher temperature, drain current and transconductance reduces due to lower electron sheet concentration. Different combinations of gate biases (applied at the second gate i.e. Gate 2 presented near the drain side) has been used for optimizing the device parameter for better switching performance. For DG-MISHEMT with barrier thickness of 22 nm (both the gates connected together), ION/IOFF ratio reduces from 109 to 106 for high temperature (upto 423 K) due to reduced sheet carrier concentration. For inductance load, output drain voltage exhibits voltage range of 9.2V/2.3V for gate pulse of -8V/+2V with 30% duty cycle. Also, it is seen that as barrier thickness is varied from 18 nm to 30 nm, IOFF increases and results in reduced output drain voltages. Performance of Single Gate and Double Gate MISHEMTs has also been compared for DC-to DC converter using inductance load circuit." @default.
- W3025101308 created "2020-05-21" @default.
- W3025101308 creator A5056318337 @default.
- W3025101308 creator A5057566640 @default.
- W3025101308 creator A5060130314 @default.
- W3025101308 creator A5073570662 @default.
- W3025101308 date "2020-08-01" @default.
- W3025101308 modified "2023-09-27" @default.
- W3025101308 title "Assessment of Dual-Gate AlGaN/GaN MISHEMT for high temperature DC to DC converter" @default.
- W3025101308 cites W1926220507 @default.
- W3025101308 cites W1965817159 @default.
- W3025101308 cites W1986565837 @default.
- W3025101308 cites W2005806650 @default.
- W3025101308 cites W2016168710 @default.
- W3025101308 cites W2016650411 @default.
- W3025101308 cites W2029354491 @default.
- W3025101308 cites W2032262202 @default.
- W3025101308 cites W2069325331 @default.
- W3025101308 cites W2096217875 @default.
- W3025101308 cites W2103250050 @default.
- W3025101308 cites W2139228516 @default.
- W3025101308 cites W2143206330 @default.
- W3025101308 cites W2314388511 @default.
- W3025101308 cites W2523132373 @default.
- W3025101308 cites W2529465792 @default.
- W3025101308 cites W2553142732 @default.
- W3025101308 cites W2558098616 @default.
- W3025101308 cites W2618867929 @default.
- W3025101308 cites W2735146458 @default.
- W3025101308 cites W2737515123 @default.
- W3025101308 cites W2742696422 @default.
- W3025101308 cites W2781568315 @default.
- W3025101308 cites W2801044269 @default.
- W3025101308 cites W2945696935 @default.
- W3025101308 doi "https://doi.org/10.1016/j.spmi.2020.106574" @default.
- W3025101308 hasPublicationYear "2020" @default.
- W3025101308 type Work @default.
- W3025101308 sameAs 3025101308 @default.
- W3025101308 citedByCount "1" @default.
- W3025101308 countsByYear W30251013082022 @default.
- W3025101308 crossrefType "journal-article" @default.
- W3025101308 hasAuthorship W3025101308A5056318337 @default.
- W3025101308 hasAuthorship W3025101308A5057566640 @default.
- W3025101308 hasAuthorship W3025101308A5060130314 @default.
- W3025101308 hasAuthorship W3025101308A5073570662 @default.
- W3025101308 hasConcept C121332964 @default.
- W3025101308 hasConcept C124952713 @default.
- W3025101308 hasConcept C142362112 @default.
- W3025101308 hasConcept C192562407 @default.
- W3025101308 hasConcept C2780980858 @default.
- W3025101308 hasConcept C49040817 @default.
- W3025101308 hasConcept C61696701 @default.
- W3025101308 hasConceptScore W3025101308C121332964 @default.
- W3025101308 hasConceptScore W3025101308C124952713 @default.
- W3025101308 hasConceptScore W3025101308C142362112 @default.
- W3025101308 hasConceptScore W3025101308C192562407 @default.
- W3025101308 hasConceptScore W3025101308C2780980858 @default.
- W3025101308 hasConceptScore W3025101308C49040817 @default.
- W3025101308 hasConceptScore W3025101308C61696701 @default.
- W3025101308 hasFunder F4320323670 @default.
- W3025101308 hasFunder F4320324131 @default.
- W3025101308 hasLocation W30251013081 @default.
- W3025101308 hasOpenAccess W3025101308 @default.
- W3025101308 hasPrimaryLocation W30251013081 @default.
- W3025101308 hasRelatedWork W2058676402 @default.
- W3025101308 hasRelatedWork W2059363835 @default.
- W3025101308 hasRelatedWork W2139871202 @default.
- W3025101308 hasRelatedWork W2292675962 @default.
- W3025101308 hasRelatedWork W2329285141 @default.
- W3025101308 hasRelatedWork W2399397734 @default.
- W3025101308 hasRelatedWork W2769410768 @default.
- W3025101308 hasRelatedWork W2902546961 @default.
- W3025101308 hasRelatedWork W3127524829 @default.
- W3025101308 hasRelatedWork W4296250578 @default.
- W3025101308 hasVolume "144" @default.
- W3025101308 isParatext "false" @default.
- W3025101308 isRetracted "false" @default.
- W3025101308 magId "3025101308" @default.
- W3025101308 workType "article" @default.