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- W302545480 abstract "Single crystals of the Goss orientation, {011}〈100〉, containing large (> 2 μm) silicon particles have been deformed in channel die compression. In regions far from particles the matrix is stable, and deformation heterogeneities, other than those associated with particles, do not form. In addition to regions of lattice rotation close to the particles, small elongated deformation bands with orientations tending towards {112}〈111〉 at large strains are formed. On annealing, recrystallization originates at the particles (PSN). The orientations of these grains are spread around the Goss orientation and towards {112}〈111〉. It is found that at low strains, grains with specific orientation relationships to the matrix, 45°〈111〉 and 24°〈150〉, grow more rapidly than other PSN grains, thus producing a bimodal grain size and a strong recrystallization texture. However, at large strains, the grain growth rates are similar and a smaller grain size and weaker texture results." @default.
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- W302545480 date "1996-08-01" @default.
- W302545480 modified "2023-10-16" @default.
- W302545480 title "The deformation and recrystallization of particle-containing {011}〈100〉 aluminium crystals" @default.
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- W302545480 doi "https://doi.org/10.1016/1359-6454(95)00432-7" @default.
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