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• W3025669168 abstract "Recently, the concept of perpendicular shape anisotropy spin-transfer-torque magnetic random-access memory (PSA STT MRAM) was proposed to enhance the thermal stability factor, $mathrm{ensuremath{Delta}}$, of the storage layer through its shape anisotropy, thus enabling the downsizing scalability of conventional STT MRAM beyond sub-20-nm technological nodes. However, this is expected to negatively impact the writing current and switching time, calling for the search for the best compromise. Here, we report a micromagnetic study of the STT-driven magnetization reversal of sub-20-nm PSA STT MRAM cells, with a particular emphasis on the technologically relevant case of $mathrm{ensuremath{Delta}}ensuremath{simeq}80$, thus providing guidelines for their practical design. For an aspect ratio ($ensuremath{eta}$) of the storage layer of $ensuremath{eta}ensuremath{le}1$, magnetization reversal obeys a macrospinlike mechanism, while for $ensuremath{eta}>1$ a noncoherent reversal is observed, which is characterized by buckling or nucleation of a transverse domain wall at the ferromagnet-insulator interface, which then propagates along the vertical axis. Decreasing the lateral size while maintaining a constant value of $mathrm{ensuremath{Delta}}$ implies a larger height, which is found to lead to an increase of the switching voltage. In all cases, the inverse of the switching time scales linearly with the applied voltage." @default.
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• W3025669168 date "2021-08-11" @default.
• W3025669168 modified "2023-09-26" @default.
• W3025669168 title "Spin-Torque-Triggered Magnetization Reversal in Magnetic Tunnel Junctions with Perpendicular Shape Anisotropy" @default.
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• W3025669168 doi "https://doi.org/10.1103/physrevapplied.16.024020" @default.
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