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Matches in SemOpenAlex for { <https://semopenalex.org/work/W3028894965> ?p ?o ?g. }

• W3028894965 endingPage "564" @default.
• W3028894965 startingPage "559" @default.
• W3028894965 abstract "In this paper, a new vertical double-diffused metal-oxide semiconductor field effect transistors (VDMOS) is proposed with the partial SiC/Si heterojunction (Partial SiC/Si VDMOS) under the drain electrode in this paper for the first time. The breakdown point transfer technique (BPT) is used to transfer the breakdown point from the radius of curvature is large to the radius of curvature is small in the interface between Pwell and Ndrift region, which causes the longitudinal peak value of electric field to be raised, and the higher breakdown voltage (BV) can be obtained. At the same time, the formation of highly doped N-type silicon trench alleviates interface state problems caused by current flowing through SiC/Si heterojunction and further optimized the whole SiC/Si heterojunction (SiC/Si VDMOS). The limit line of the silicon has been broken because the result is improved between the BV and the specific on-resistance (R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on,sp</sub> ). Compared with the conventional Si VDMOS, the BV is increased from 238V to 342V, and the R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>on,sp</sub> is reduced from 14.24mΩ·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> to 13.92mΩ·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ." @default.
• W3028894965 created "2020-06-05" @default.
• W3028894965 creator A5003089758 @default.
• W3028894965 creator A5004488558 @default.
• W3028894965 creator A5051622851 @default.
• W3028894965 creator A5052863980 @default.
• W3028894965 date "2020-01-01" @default.
• W3028894965 modified "2023-10-15" @default.
• W3028894965 title "Novel Power MOSFET With Partial SiC/Si Heterojunction to Improve Breakdown Voltage by Breakdown Point Transfer (BPT) Terminal Technology" @default.
• W3028894965 cites W1523219001 @default.
• W3028894965 cites W1585838201 @default.
• W3028894965 cites W1965150960 @default.
• W3028894965 cites W2034168705 @default.
• W3028894965 cites W2095935280 @default.
• W3028894965 cites W2118259382 @default.
• W3028894965 cites W2126867568 @default.
• W3028894965 cites W2134576252 @default.
• W3028894965 cites W2134784934 @default.
• W3028894965 cites W2139941509 @default.
• W3028894965 cites W2146280966 @default.
• W3028894965 cites W2307322327 @default.
• W3028894965 cites W2342422071 @default.
• W3028894965 cites W2533128293 @default.
• W3028894965 cites W2587992405 @default.
• W3028894965 cites W2748960499 @default.
• W3028894965 cites W2809784432 @default.
• W3028894965 cites W2899345146 @default.
• W3028894965 cites W2905339808 @default.
• W3028894965 cites W2913019121 @default.
• W3028894965 cites W2952789461 @default.
• W3028894965 cites W2971184817 @default.
• W3028894965 cites W858750904 @default.
• W3028894965 doi "https://doi.org/10.1109/jeds.2020.2997086" @default.
• W3028894965 hasPublicationYear "2020" @default.
• W3028894965 type Work @default.
• W3028894965 sameAs 3028894965 @default.
• W3028894965 citedByCount "3" @default.
• W3028894965 countsByYear W30288949652021 @default.
• W3028894965 countsByYear W30288949652022 @default.
• W3028894965 crossrefType "journal-article" @default.
• W3028894965 hasAuthorship W3028894965A5003089758 @default.
• W3028894965 hasAuthorship W3028894965A5004488558 @default.
• W3028894965 hasAuthorship W3028894965A5051622851 @default.
• W3028894965 hasAuthorship W3028894965A5052863980 @default.
• W3028894965 hasBestOaLocation W30288949651 @default.
• W3028894965 hasConcept C113196181 @default.
• W3028894965 hasConcept C119321828 @default.
• W3028894965 hasConcept C119599485 @default.
• W3028894965 hasConcept C127413603 @default.
• W3028894965 hasConcept C145598152 @default.
• W3028894965 hasConcept C165801399 @default.
• W3028894965 hasConcept C172385210 @default.
• W3028894965 hasConcept C178635117 @default.
• W3028894965 hasConcept C185592680 @default.
• W3028894965 hasConcept C191897082 @default.
• W3028894965 hasConcept C192562407 @default.
• W3028894965 hasConcept C2778413303 @default.
• W3028894965 hasConcept C2780722187 @default.
• W3028894965 hasConcept C38652104 @default.
• W3028894965 hasConcept C41008148 @default.
• W3028894965 hasConcept C43617362 @default.
• W3028894965 hasConcept C49040817 @default.
• W3028894965 hasConcept C79794668 @default.
• W3028894965 hasConceptScore W3028894965C113196181 @default.
• W3028894965 hasConceptScore W3028894965C119321828 @default.
• W3028894965 hasConceptScore W3028894965C119599485 @default.
• W3028894965 hasConceptScore W3028894965C127413603 @default.
• W3028894965 hasConceptScore W3028894965C145598152 @default.
• W3028894965 hasConceptScore W3028894965C165801399 @default.
• W3028894965 hasConceptScore W3028894965C172385210 @default.
• W3028894965 hasConceptScore W3028894965C178635117 @default.
• W3028894965 hasConceptScore W3028894965C185592680 @default.
• W3028894965 hasConceptScore W3028894965C191897082 @default.
• W3028894965 hasConceptScore W3028894965C192562407 @default.
• W3028894965 hasConceptScore W3028894965C2778413303 @default.
• W3028894965 hasConceptScore W3028894965C2780722187 @default.
• W3028894965 hasConceptScore W3028894965C38652104 @default.
• W3028894965 hasConceptScore W3028894965C41008148 @default.
• W3028894965 hasConceptScore W3028894965C43617362 @default.
• W3028894965 hasConceptScore W3028894965C49040817 @default.
• W3028894965 hasConceptScore W3028894965C79794668 @default.
• W3028894965 hasFunder F4320327912 @default.
• W3028894965 hasLocation W30288949651 @default.
• W3028894965 hasOpenAccess W3028894965 @default.
• W3028894965 hasPrimaryLocation W30288949651 @default.
• W3028894965 hasRelatedWork W1481245673 @default.
• W3028894965 hasRelatedWork W1525184333 @default.
• W3028894965 hasRelatedWork W1994548434 @default.
• W3028894965 hasRelatedWork W2041012288 @default.
• W3028894965 hasRelatedWork W2084374481 @default.
• W3028894965 hasRelatedWork W2167514739 @default.
• W3028894965 hasRelatedWork W2595838235 @default.
• W3028894965 hasRelatedWork W3109152399 @default.
• W3028894965 hasRelatedWork W3110034223 @default.
• W3028894965 hasRelatedWork W2473768549 @default.
• W3028894965 hasVolume "8" @default.
• W3028894965 isParatext "false" @default.
• W3028894965 isRetracted "false" @default.

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