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• W3029395674 abstract "Investigating group-IV-based photonic components is a very active area of research with extensive interest in developing complementary metal-oxide-semiconductor (CMOS) compatible light sources. However, due to the indirect band gap of these materials, effective light-emitting diodes and lasers based on pure Ge or Si cannot be realized. In this context, there is considerable interest in developing group-IV based Raman lasers. Nevertheless, the low quantum yield of stimulated Raman scattering in Si and Ge requires large device footprints and high lasing thresholds. Consequently, the fabrication of integrated, energy-efficient Raman lasers is challenging. Here, we report the systematic investigation of stimulated Raman scattering (SRS) in Ge nanowires (NWs) and axial Al-Ge-Al NW heterostructures with Ge segments that come into contact with self-aligned Al leads with abrupt metal–semiconductor interfaces. Depending on their geometry, these quasi-one-dimensional (1D) heterostructures can reassemble into Ge nanowires, Ge nanodots, or Ge nanodiscs, which are monolithically integrated within monocrystalline Al (c-Al) mirrors that promote both optical confinement and effective heat dissipation. Optical mode resonances in these nanocavities support in SRS thresholds as low as 60 kW/cm2. Most notably, our findings provide a platform for elucidating the high potential of future monolithically integrated, nanoscale low-power group-IV-based Raman lasers." @default.
• W3029395674 created "2020-06-05" @default.
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• W3029395674 date "2020-05-28" @default.
• W3029395674 modified "2023-10-18" @default.
• W3029395674 title "Stimulated Raman Scattering in Ge Nanowires" @default.
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• W3029395674 doi "https://doi.org/10.1021/acs.jpcc.0c02602" @default.
• W3029395674 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/7322725" @default.
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• W3029395674 hasPublicationYear "2020" @default.
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