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- W303178875 abstract "The degree of influence of the charge state of defects on the accumulation of the E3 centers was found to depend on the energy transferred to the lattice atoms of GaAs in the course of irradiation. An estimate was obtained of the threshold energy of the formation of the E3 centers in a space-charge layer. The values of the efficiency of accumulation of the E2--E5 centers were determined for various types of irradiation." @default.
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- W303178875 date "1983-10-01" @default.
- W303178875 modified "2023-09-24" @default.
- W303178875 title "Dependence, on the energy of recoil atoms, of the degree of influence of the charge state of defects on the accumulation of deep centers" @default.
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