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- W3033138914 abstract "We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with B and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density eB/h across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 μeV/1011 cm−2, which is consistent with theoretical predictions for near-perfect quantum well top interfaces.Received 4 June 2020Accepted 23 September 2020DOI:https://doi.org/10.1103/PhysRevLett.125.186801© 2020 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasInteger quantum Hall effectLandau levelsQuantum information with solid state qubitsPhysical SystemsQuantum wellsSemiconductor compoundsCondensed Matter, Materials & Applied Physics" @default.
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- W3033138914 date "2020-10-28" @default.
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- W3033138914 title "Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells" @default.
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- W3033138914 doi "https://doi.org/10.1103/physrevlett.125.186801" @default.
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