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• W3033188518 abstract "Aiming at the improvement of silicon (Si) film quality deposited by atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition at a low substrate temperature of 120 °C, the difference between continuous wave (CW) and pulsed plasmas for deposition characteristics depending on H2 and SiH4 flow rates and inpur VHF power has been studied. A specifically designed parallel-plate-type electrode system is used to generate the AP plasma, which is excited by a 150 MHz very high-frequency (VHF) electric power. Hydrogen (H2) and monosilane (SiH4) diluted with helium (He) are used as the process gases. The electrode system enables us to form turbulence-free one-dimensional gas flow in the plasma zone, by which the deposition process without contamination of substrate surface with dust particles is ensured. The electrical property of the deposited Si layers was evaluated by fabricating bottom-gate thin film transistors (TFTs). The performance of bottom-gate TFTs showed that the a-Si TFTs, the channel layers of which are prepared with a pulse duty cycle of 10%, have reasonably high field effect mobilities around 1 cm2V–1s–1, suggesting that the pulse modulation of input VHF power is very effective in achieving plasma chemistry suitable for high-quality Si growths at low temperatures." @default.
• W3033188518 created "2020-06-12" @default.
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• W3033188518 date "2020-07-21" @default.
• W3033188518 modified "2023-10-17" @default.
• W3033188518 title "Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors" @default.
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• W3033188518 doi "https://doi.org/10.1088/1361-6463/ab9919" @default.
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