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• W3033573721 abstract "This draft investigates about the vertical tunnel FET (VTFET) with heterostructure at channel/source interface of SiGe layer using Sentaurus Technology computer-aided design simulation. As MOSFET is scaled down to the nanoscale dimensions, the problems arise such as short channel effects, the I-OFF leakage current grow drastically because to the non-versatility of edge voltage as the subthreshold slope or swing (SS) is restricted to 60 mV/decade. Tunnel FET (TFET) smothered the point of confinement of 60mV/decade by utilizing quantum-mechanical band-2-band tunneling (B2BT) due to which the performance of this circuit for low power applications improved. The vertical tunnel FET (VTFET) has dispersal of source channel drain in the vertical direction which will enhance the scalability of the simulated device. Further introduction of 10 nm silicon germanium layer to the channel makes aggressive improvement in the numerical simulations of VT, subthreshold swing (SS) found to be 31.05 mV/decade, high on/off current ratio of the order of 1010 in 40 nm channel length. Further, it is observed form the device simulation that optimizing the gate oxide material, workfunction (WF), and SiGe molefraction will increase the drive current exponentially along with the reduced ambipolarity by gate underlap region to the drain terminal. Additionally, high Ion/Ioff current ratio (~1010), VT threshold voltage (~ 0.352 V), and maximum ion current with 1.126 x10−05 (A/μm) are reported to the paper." @default.
• W3033573721 created "2020-06-12" @default.
• W3033573721 creator A5039421939 @default.
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• W3033573721 date "2020-01-01" @default.
• W3033573721 modified "2023-10-03" @default.
• W3033573721 title "Design and Analysis of ION and Ambipolar Current for Vertical TFET" @default.
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• W3033573721 doi "https://doi.org/10.1007/978-981-15-4619-8_39" @default.
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