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- W3033598424 abstract "High performance InGaN micro-size light-emitting diodes (µLEDs) with epitaxial tunnel junctions (TJs) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN layers with small holes were grown on top of standard InGaN blue LEDs to form TJs using SAG. TJ µLEDs with squared mesa ranging from 10×10 to 100×100 µm 2 were fabricated. The forward voltage (V f ) in the reference TJ µLEDs without SAG is very high and decreases linearly from 4.6 to 3.7 V at 20 A/cm 2 with reduction in area from 10000 to 100 µm 2 , which is caused by the lateral out diffusion of hydrogen through sidewall. By contrast, the V f at 20 A/cm 2 in the TJ µLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the V f in the SAG TJ µLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG. The output power of SAG TJ µLEDs is ∼10% higher than the common µLEDs with indium tin oxide (ITO) contact." @default.
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- W3033598424 date "2020-06-08" @default.
- W3033598424 modified "2023-10-12" @default.
- W3033598424 title "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition" @default.
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- W3033598424 doi "https://doi.org/10.1364/oe.394664" @default.
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