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• W3033972821 endingPage "105171" @default.
• W3033972821 startingPage "105171" @default.
• W3033972821 abstract "The metal oxide semiconductor capacitors containing Mn doped ZrO2 high-κ films acted as active oxide layer were fabricated on Si (100) wafer by electron beam evaporation. Structural analysis by GIXRD revealed a complete tetragonal phase stabilization in ZrO2 thin films when doped with 5 and 8 mol% Mn and annealed at 500 °C. Film thickness of 40–80 nm was confirmed by XRR and cross-sectional FESEM analysis. Composition analysis by XPS showed that the ZrO2 thin films were stoichiometric and the Mn ions have existed in +2 oxidation state. The film surfaces were obtained to be smooth and crack free when analyzed by FESEM and AFM where the RMS roughness was found to be in the range from 0.43 to 0.82 nm. All the MOS capacitors have shown good capacitance-voltage characteristics with equivalent oxide thicknesses varying from 7.2 to 9.7 nm. The highest dielectric constant of 39.2 was observed in ZrO2 layer with 8 mol% Mn and the dielectric constant was increasing with Mn concentration. Leakage current in the MOS capacitors was found reduced by an order of magnitude due to Mn stabilized tetragonal ZrO2 layer. Among the MOS capacitors the leakage current density of as low as 1.28 × 10−6 A/cm2 was recorded at −1 V with 5 mol% Mn concentration in ZrO2 layer. The complex leakage currents across the dielectric layer in the MOS capacitors were explained based on several current conduction mechanisms. Leakage current in these devices was predominantly covered by space charge limited conduction mechanism. At lower voltages (less than −5 V), Poole-Frenkel and Schottky emission were found dominant whereas Trap-assisted tunneling and Fowler-Nordheim tunneling had contributed to the leakage current conduction at voltages greater than −10 V." @default.
• W3033972821 created "2020-06-12" @default.
• W3033972821 creator A5039527046 @default.
• W3033972821 creator A5086148034 @default.
• W3033972821 date "2020-11-01" @default.
• W3033972821 modified "2023-10-18" @default.
• W3033972821 title "Surface analysis, gate leakage currents and electrical characteristics of Mn ions incorporated into ZrO2 gate dielectric layer in silicon MOS capacitors" @default.
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• W3033972821 cites W2911683297 @default.
• W3033972821 doi "https://doi.org/10.1016/j.mssp.2020.105171" @default.
• W3033972821 hasPublicationYear "2020" @default.
• W3033972821 type Work @default.
• W3033972821 sameAs 3033972821 @default.
• W3033972821 citedByCount "4" @default.
• W3033972821 countsByYear W30339728212021 @default.
• W3033972821 countsByYear W30339728212022 @default.
• W3033972821 countsByYear W30339728212023 @default.
• W3033972821 crossrefType "journal-article" @default.
• W3033972821 hasAuthorship W3033972821A5039527046 @default.
• W3033972821 hasAuthorship W3033972821A5086148034 @default.
• W3033972821 hasConcept C113196181 @default.
• W3033972821 hasConcept C119599485 @default.
• W3033972821 hasConcept C127413603 @default.
• W3033972821 hasConcept C133386390 @default.
• W3033972821 hasConcept C139719470 @default.

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