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• W3034172708 abstract "The p-Si/n-ZnO:La heterojunctions were obtained using different dopant levels (0.2, 0.4, 0.6, 0.8 and 1%) nanostructured ZnO films. To characterize the electrical behavior of these structures, the current-voltage (I-V) analysis were performed. It was observed that all of them showed good rectifying behavior. The diode parameters were determined by using different methods. To characterize the photovoltaic behavior of these diodes, I-V measurements were performed under illuminations (20–100 mW/cm2). The results indicated that obtained photodiode exhibited a good photoconducting behavior." @default.
• W3034172708 created "2020-06-12" @default.
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• W3034172708 date "2020-09-01" @default.
• W3034172708 modified "2023-10-15" @default.
• W3034172708 title "Electrical and photovoltaic properties of p-n heterojunctions obtained using sol gel derived nanostructured ZnO:La films onto p-Si" @default.
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• W3034172708 doi "https://doi.org/10.1016/j.spmi.2020.106605" @default.
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