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• W3034648833 abstract "We report the observation at low temperature of a hump in the linear transfer characteristic of a thin film fully depleted silicon-on-insulator transistor when a positive bias is applied on the back gate under the buried oxide. This decrease in the current is correlated with the transition from one-subband to two-subband conduction. Electron mobility measurements and calculations are in good agreement with the occurrence of intersubband scattering in carrier transport in the two-dimensional inversion layer." @default.
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• W3034648833 date "2020-06-15" @default.
• W3034648833 modified "2023-10-03" @default.
• W3034648833 title "Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K" @default.
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• W3034648833 doi "https://doi.org/10.1063/5.0007100" @default.
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