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• W3034854832 startingPage "2000061" @default.
• W3034854832 abstract "Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous, and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric α-In2Se3, a new approach is reported to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin α-In2Se3 and MoS2, an in-plane voltage gated coplanar field-effect transistor with distinguished and retentive on/off ratio is validated. The results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating 2D ferroelectric into novel nanoelectronic devices with broad applications." @default.
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• W3034854832 date "2020-06-11" @default.
• W3034854832 modified "2023-10-16" @default.
• W3034854832 title "Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In ₂ Se ₃" @default.
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• W3034854832 doi "https://doi.org/10.1002/aelm.202000061" @default.
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