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• W3035205690 abstract "We have evaluated the hole trapping capability of the silicon carbonitride (SiCN) dielectric film for application in metal-oxide-nitride-oxide-silicon (MONOS)-type non-volatile memory devices. After a great number of holes were injected to the SiCN charge trap layer of memory capacitors at high applied voltages, the flat-band voltage shift Δ V fb,h of the capacitors was saturated and the charge centroid location of holes trapped in the SiCN layer was found to reach at 1.8–2.0 nm from the blocking oxide-charge trap layer interface. Using the obtained Δ V fb,h and charge centroid values, the maximum density of holes trapped in the SiCN layer was estimated to be 1.2 × 10 13 holes/cm 2 , which was higher than that trapped in a silicon nitride charge trap layer (=1.0 × 10 13 holes/cm 2 ). It is concluded that the high density of trapped holes caused large Δ V fb,h in the memory capacitors with the SiCN layer." @default.
• W3035205690 created "2020-06-19" @default.
• W3035205690 creator A5032165134 @default.
• W3035205690 creator A5037417355 @default.
• W3035205690 date "2020-07-01" @default.
• W3035205690 modified "2023-10-04" @default.
• W3035205690 title "Hole trapping capability of silicon carbonitride charge trap layers" @default.
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• W3035205690 doi "https://doi.org/10.1051/epjap/2020190297" @default.
• W3035205690 hasPublicationYear "2020" @default.
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