Matches in SemOpenAlex for { <https://semopenalex.org/work/W3035340980> ?p ?o ?g. }
- W3035340980 abstract "Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators." @default.
- W3035340980 created "2020-06-19" @default.
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- W3035340980 date "2020-06-12" @default.
- W3035340980 modified "2023-10-18" @default.
- W3035340980 title "Non-thermal resistive switching in Mott insulator nanowires" @default.
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- W3035340980 doi "https://doi.org/10.1038/s41467-020-16752-1" @default.
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