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- W3035831946 abstract "The ion beam etching of cellular material was studied by examining uncoated cells during the course of etching in the specimen chamber of a scanning electron microscope. Repeated examination of the cells during etching faciliated the interpretation of features in the etched surface. Cells were initially fixed in glutaraldehyde prior to being dispersed in a monolayer on a conductive silicon wafer originally used as a substrate for electron microprobe specimens. The cells were subsequently dehydrated in ethanol and critical point dried in carbon dioxide. Etching was carried out in the specimen chamber of an ETEC scanning electron microscope using an ETEC ion beam etching device. An 18 KV argon ion beam with a 40° angle of incidence was utilized for etching. The cells were rotated at about 4 rpms. Etching was interrupted at specific time intervals and the cells were examined as they remained uncoated in the specimen chamber. Ten through 20 KV electron beams were used to examine the cells." @default.
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- W3035831946 date "1974-08-15" @default.
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- W3035831946 title "Ion Beam Etching of Cellular Material" @default.
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- W3035831946 doi "https://doi.org/10.1017/s0424820100050640" @default.
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