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• W3035905963 abstract "Electrical and reliability characteristics of hafnia ferroelectric capacitor are influenced by a capping electrode layer which controls the type of stress and the amount of oxygen vacancy inside hafnia. Here, we present the impact of metal nitride and metal oxide electrode on the ferroelectricity of a Hf <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Zr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (HZO) capacitor. For comparison, we employed two different top electrodes (RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and TiN) with hafnia ferroelectric layer, forming RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HZO/TiN and TiN/HZO/TiN capacitors. The RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> top electrode provides additional oxygen to the HZO film, lowering the amount of oxygen vacancies in the film. From material analysis, we found that the top RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HZO interface exhibits less oxygen vacancy in comparison to the top TiN/HZO interface. In addition, for RuO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HZO/TiN, due to different thermal expansion coefficient between top and bottom electrodes, the HZO film experiences significant tensile stress, resulting in the high o-phase formation and remnant polarization (~ 20~μC /cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) as compared with that of TiN/HZO/TiN capacitor (~13~μC/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ). This article suggests an efficient solution to reduce the interfacial defects and oxygen vacancies as well as to enhance o-phase formation and ferroelectricity." @default.
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• W3035905963 date "2020-08-01" @default.
• W3035905963 modified "2023-09-30" @default.
• W3035905963 title "Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode" @default.
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• W3035905963 doi "https://doi.org/10.1109/ted.2020.2998444" @default.
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