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• W3035924223 abstract "Metal oxide thin-film transistors (TFTs) play an important role in the driving circuitry for large area displays and flexible electronics. Among the essential components of a TFT, the gate dielectric insulator is vitally important for achieving high performances such as minimizing both leakage current and power consumption, because it can control the conductance of semiconductor channels by accumulating charges. As the Moore’s law points the trend of constantly shrinking in transistor size, in order to keep the performance unaffected, the thickness of the gate dielectric layer needs to be correspondingly reduced. Thinner gate dielectrics inevitably leads to quantum tunneling effect that will cause the increase of gate leakage current. It is important to find new materials with high dielectric constant (high-k) to replace the traditional gate dielectric (e.g., SiO2). In this regard, metal oxide dielectrics have found their roles. The chapter introduces the basic knowledge and theory of high-k metal oxide dielectrics including Al2O3, HfO2, and ZrO2. Using TFTs as electronic device examples, the functions of metal oxide dielectrics are explained." @default.
• W3035924223 created "2020-06-25" @default.
• W3035924223 creator A5036022527 @default.
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• W3035924223 date "2020-01-01" @default.
• W3035924223 modified "2023-10-04" @default.
• W3035924223 title "Metal oxide dielectrics" @default.
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• W3035924223 doi "https://doi.org/10.1016/b978-0-12-814930-0.00003-7" @default.
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