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- W3036094013 abstract "Aluminum nitride ($mathrm{Al}mathrm{N}$) is a promising candidate for the manufacture of vacuum ultraviolet (VUV) photodetectors. However, its poor electrical conductivity limits its applications. Herein, a high-performance $mathrm{Al}mathrm{N}$ nanowire (NW)-$mathrm{Ni}mathrm{O}$ quantum dot (QD) based VUV photodetector is constructed via a mixed-dimensional strategy. The formation of isolated nanoscale p-n heterojunctions greatly increases the concentration of photogenerated electrons, resulting in an ultrahigh photoconductive gain (9.96) in the $mathrm{Al}mathrm{N}$ NW-$mathrm{Ni}mathrm{O}$ QD material, which is about 27-fold higher than that of $mathrm{Al}mathrm{N}$ NW (0.368). In addition, the significant improvement in both photocurrent and response speed convincingly suggest the great potential of $mathrm{Al}mathrm{N}$ NW-$mathrm{Ni}mathrm{O}$ QD based VUV photodetectors. Furthermore, the properties of these photodetectors in an irradiation environment are also evaluated here. It is found that $mathrm{Al}mathrm{N}$ NW exhibits excellent anti-irradiation characteristics towards both electron and proton irradiation, while the $mathrm{Al}mathrm{N}$ NW-$mathrm{Ni}mathrm{O}$ QD material also presents promising potential under low-dose electron irradiation. This study can be used as a guideline to design and fabricate high-performance VUV photodetectors based on wide-band-gap semiconductors coupled with other nanostructured systems." @default.
- W3036094013 created "2020-06-25" @default.
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- W3036094013 date "2020-06-16" @default.
- W3036094013 modified "2023-10-17" @default.
- W3036094013 title "Ultrahigh Gain of a Vacuum-Ultraviolet Photodetector Based on a Heterojunction Structure of AlN Nanowires and NiO Quantum Dots" @default.
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- W3036094013 doi "https://doi.org/10.1103/physrevapplied.13.064036" @default.
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