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- W3036173867 abstract "In this paper, we present a channel thickness dependent analytical model for MoS 2 symmetric double-gate FETs aiming at circuit simulation. To validate the model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data of N-layer ( $mathbf{N}=mathbf{1,2,3,4}$ , and 5) MoS 2 accounting for the $K$ and $Lambda$ valley dependent effective masses and difference in energy levels. These extracted layer dependent material parameters are used as an input with layer independent mobility in DD simulator (coupled drift-diffusion and Poisson solver). The model shows excellent match for surface potential and drain current. The model prediction of digital figure of merits is also shown against the simulation data." @default.
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- W3036173867 date "2020-04-01" @default.
- W3036173867 modified "2023-09-27" @default.
- W3036173867 title "Compact Modeling of Surface Potential and Drain Current in Multi-layered MoS<sub>2</sub> FETs" @default.
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- W3036173867 doi "https://doi.org/10.1109/edtm47692.2020.9117875" @default.
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