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- W3036242793 abstract "It is well known that heavy metallic contaminations are harmful to the performance of silicon devices. There are several investigations about the precipitation behaviors of heavy metals on Si wafers. In this study, the observations of transmission electron microscopy (TEM) were carried out to identify defects induced by intentional Cu, Ni and Fe contamination on Si(100) surface. P-doped 5-12 Ω·cm, 5inch-diameter CZ-Si(100)wafers, with a mirror polished front surface and only chemically etched back surface, were used. The front surfaces of wafers were contaminated quantitatively by the technique proposed previously. The concentrations of each element on the surface were determined with an atomic absorption spectrophotometer. Cross-sectinal and plane TEM observations were conducted with a Hitachi H-9000 at 300KV. The conditions of annealings are shown in Fig.1. When the wafer was contaminated with Cu, colony precipitates were observed within a thin region near an interface of Si and SiO 2 formed during the annealing. Each precititate was the same crystallographic orientaion and lies along Si(110) plane(Fig.2)." @default.
- W3036242793 created "2020-06-25" @default.
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- W3036242793 date "1990-08-01" @default.
- W3036242793 modified "2023-10-18" @default.
- W3036242793 title "Identification of defects induced by heavy metal contamination on Si(100) surface using TEM" @default.
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- W3036242793 doi "https://doi.org/10.1017/s0424820100175971" @default.
- W3036242793 hasPublicationYear "1990" @default.
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