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- W3036403878 abstract "In addition to the obvious advantages of low temperature semiconductor processing, the potential exists to fabricate new compounds that would not normally be accessible via conventional deposition techniques. For example, we have recently demonstrated the feasibility of growing C x Si 1-x (x ≃ 0.03) epitaxial alloys oil Si(100) using remote plasma-enhanced chemical vapor deposition (RPECVD) without the formation of SiC. It is our hypothesis that the band gap of these metastable alloys will depend on carbon concentration and lie between the values for silicon (E g = 1.1 eV) and β-SiC (E g = 2.3 eV). The potential would then exist for using these metastable epitaxial alloys for the emitter of a Si-based heterojunction bipolar transistor (HBT). However, the details and limits of metastable carbon incorporation still remain to be elucidated. In this context, the microstructural examination of this novel electronic materials system takes on added importance and relevance. Diffraction contrast and high-resolution transmission electron microscopy (HRTEM) results are presented from metastable C x Si 1-x epitaxial alloys that have been grown on Si(100) by RPECVD." @default.
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- W3036403878 date "1990-08-01" @default.
- W3036403878 modified "2023-10-14" @default.
- W3036403878 title "High-resolution Transmission Electron Microscopy study of metastable CxSi1-x epitaxial alloys grown on silicon" @default.
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- W3036403878 doi "https://doi.org/10.1017/s0424820100175922" @default.
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