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- W3036619277 endingPage "110654" @default.
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- W3036619277 abstract "In this work, we investigate a passivating hole-selective tunnel contact on crystalline silicon (Si) based on an ultrathin thermal SiO2 and a (sub-)monolayer thick aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) with 1 to 7 cycles. Rapid thermal annealing (RTA) is essential to activate the passivation and intense visible light is demonstrated to play a key role in the formation and occupation of the Al-induced acceptor states in SiO2 that provide the passivation. This simple stack provides very good surface passivation on n-type Si with a surface saturation current density as low as J0s = 25 fA/cm2 (Seff = 2.7 cm/s) and a contact resistivity ρc of ~200 mΩ cm2, while being Si-dopant-free, fully transparent and firing-stable. The Al-deposition on thermal SiO2 during the initial ALD-cycles is studied carefully by synchrotron-based reference-free grazing incidence X-ray fluorescence spectrometry (GIXRF). Different metallization and capping approaches are tested and discussed." @default.
- W3036619277 created "2020-06-25" @default.
- W3036619277 creator A5031758069 @default.
- W3036619277 creator A5034895133 @default.
- W3036619277 creator A5064358991 @default.
- W3036619277 date "2020-09-01" @default.
- W3036619277 modified "2023-09-25" @default.
- W3036619277 title "Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact" @default.
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- W3036619277 doi "https://doi.org/10.1016/j.solmat.2020.110654" @default.
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