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- W3036676136 abstract "There are two reasons for the renewed interest in using the SEM at beam voltages, V b , around 1kV (LVSEM). The most common one arises from applications in the semiconductor industry and emphasizes the reduction in charging artifacts and in subsurface beam damage. The second reason postulates that the increased contrast in the topographic component of the secondary electron signal will permit an important improvement in topographic spatial resolution if only a sufficiently small probe diameter can be obtained. We shall treat these two areas separately and then mention some of the strategies that have been adopted to make LVSEM work. Surfaces are very important in the manufacture of modern semiconductor devices and the ability of the electron probe to induce current flow (EBIC), to detect variations in surface voltage, V s , and to excite characteristic x rays in addition to its ability to image topography in an easily understandable way guaranteed the SEM a major role in programs of semiconductor development and failure analysis. There were two problems, however, charging and beam-induced damage to the specimen." @default.
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- W3036676136 date "1983-08-01" @default.
- W3036676136 modified "2023-09-23" @default.
- W3036676136 title "Low-voltage scanning electron microscopy" @default.
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- W3036676136 doi "https://doi.org/10.1017/s0424820100076160" @default.
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