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- W3036702281 abstract "High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure. The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 10 21 atoms/cm 3 . Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 10 20 atoms/cm 3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV." @default.
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- W3036702281 date "1989-08-06" @default.
- W3036702281 modified "2023-09-26" @default.
- W3036702281 title "High-resolution transmission electron microscopic study of highly oxygen doped silicon layer" @default.
- W3036702281 doi "https://doi.org/10.1017/s0424820100155438" @default.
- W3036702281 hasPublicationYear "1989" @default.
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