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- W3036761260 endingPage "146957" @default.
- W3036761260 startingPage "146957" @default.
- W3036761260 abstract "Abstract We built an in-plane device using the semiconductor and metal phases of monolayer tellurene and investigated its transport properties by the Keldysh nonequilibrium Green’s function method combined with density functional theory simulations. An obvious negative differential resistance (NDR) effect is found in the current-voltage curve of the in-plane device based on group-VI two-dimensional material for the first time, which can be explained by analyzing the transmission spectra and the electronic structure of the device. Further, the transport properties of the device under uniaxial and biaxial strains were also investigated. It is found that the local peak current of the device at small bias voltage exhibits a perfect exponential change with the x-axis strain, and the peak-to-valley ratio can be improved at most 602% by the strain. Our studies provide important support for the applications of tellurene in in-plane devices." @default.
- W3036761260 created "2020-06-25" @default.
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- W3036761260 date "2020-10-01" @default.
- W3036761260 modified "2023-09-24" @default.
- W3036761260 title "First-principles study on strain-modulated negative differential resistance effect of in-plane device based on heterostructure tellurene" @default.
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- W3036761260 doi "https://doi.org/10.1016/j.apsusc.2020.146957" @default.
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