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• W3037832206 abstract "This article deals with the characterization of charge trapping dynamics in a novel 100-nm double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order to study the detrapping mechanisms, we perform the wideband acquisitions of the transient behavior by sweeping the pulsed voltages to cover the entire device operating area. The fast acquisition also enables the characterization of the charge capture behavior, a key aspect for RF performance. From the analysis of the drain current transients, time constants are extracted, showing a fundamental release time constant in the order of 0.1-1 ms, and more than one capture constants, the fastest being in the order of 300 ns. To the best of authors' knowledge, this is the first time that trapping dynamics under large-signal regime are characterized for this type of process." @default.
• W3037832206 created "2020-07-02" @default.
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• W3037832206 date "2020-08-01" @default.
• W3037832206 modified "2023-09-25" @default.
• W3037832206 title "Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements" @default.
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• W3037832206 doi "https://doi.org/10.1109/ted.2020.3000983" @default.
• W3037832206 hasPublicationYear "2020" @default.
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