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- W3038361034 abstract "6H-SiC is a wide band-gap semiconductor. In recent years, a variety of high-power, -temperature, -speed and optoelectronic devices have been produced in SiC films. The search for metals which can form thermally stable, uniform ohmic contacts with SiC with low resistivity is still ongoing. In this study, Cr and CrBx (1<x<2) films were deposited by electron beam evaporation onto p-type, vicinal Si-terminated (0001) 6H-SiC surface. Both contacts exhibited rectifying behavior in the as-deposited condition. Ohmic-like behavior was observed for Cr/SiC system after annealing at 1000 °C for 240 seconds in a rapid thermal anneal furnace in an Ar atmosphere. It was also reported that ohmic behavior was observed for CrB2 /SiC system after annealing at 1100 °C for 2 minutes at a pressure of 5x10“7 Torr.2 The microstructure and chemistry of these two contact systems in both as-deposited and annealed conditions were investigated by transmission electron microscopy (TEM)." @default.
- W3038361034 created "2020-07-10" @default.
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- W3038361034 date "2000-08-01" @default.
- W3038361034 modified "2023-09-26" @default.
- W3038361034 title "A TEM Study of Cr Based Contacts to (0001) 6H-SiC" @default.
- W3038361034 cites W2013714937 @default.
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- W3038361034 doi "https://doi.org/10.1017/s1431927600037818" @default.
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