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• W3038904345 abstract "This paper investigates soft error in memories and logic circuits in 28 nm planar-FDSOI technology by neutron, alpha, proton, and gamma-ray irradiation tests, and compares with SER in bulk-FinFET. The comparison elucidates the different SER trends between planar-FDSOI and bulk-FinFET." @default.
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• W3038904345 date "2020-04-01" @default.
• W3038904345 modified "2023-09-27" @default.
• W3038904345 title "Investigating of SER in 28 nm FDSOI-Planar and Comparing with SER in Bulk-FinFET" @default.
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• W3038904345 doi "https://doi.org/10.1109/irps45951.2020.9129644" @default.
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